Issue 99, 2013

Solution-processed anthradithiophene–PCBM p–n junction photovoltaic cells fabricated by using the photoprecursor method

Abstract

P–n junction solar cells based on anthradithiophene (ADT) as a p-type semiconductor were fabricated by using the photoprecursor method in which an α-diketone-type precursor was spin-coated and then transformed to ADT in situ by photoirradiation. Combination with PC71BM as an n-layer material led to 1.54% photoconversion efficiency.

Graphical abstract: Solution-processed anthradithiophene–PCBM p–n junction photovoltaic cells fabricated by using the photoprecursor method

Supplementary files

Article information

Article type
Communication
Submitted
13 Aug 2013
Accepted
17 Oct 2013
First published
18 Oct 2013

Chem. Commun., 2013,49, 11638-11640

Solution-processed anthradithiophene–PCBM p–n junction photovoltaic cells fabricated by using the photoprecursor method

H. Yamada, Y. Yamaguchi, R. Katoh, T. Motoyama, T. Aotake, D. Kuzuhara, M. Suzuki, T. Okujima, H. Uno, N. Aratani and K. Nakayama, Chem. Commun., 2013, 49, 11638 DOI: 10.1039/C3CC46178E

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