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Issue 15, 2014
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Highly sensitive hydrazine chemical sensor based on ZnO nanorods field-effect transistor

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Abstract

A highly sensitive hydrazine chemical sensor has been fabricated based on a field-effect transistor (FET) by growing vertically-aligned ZnO nanorods directly on silver electrodes. The FET sensor showed a high sensitivity and a low limit of detection (LOD) of 59.175 μA cm−2 μM−1 and ∼3.86 nM, respectively. This demonstrates a cost effective and low power consuming FET strategy for the detection of hydrazine.

Graphical abstract: Highly sensitive hydrazine chemical sensor based on ZnO nanorods field-effect transistor

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Publication details

The article was received on 26 Oct 2013, accepted on 22 Nov 2013 and first published on 25 Nov 2013


Article type: Communication
DOI: 10.1039/C3CC48197B
Citation: Chem. Commun., 2014,50, 1890-1893
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    Highly sensitive hydrazine chemical sensor based on ZnO nanorods field-effect transistor

    R. Ahmad, N. Tripathy, D. Jung and Y. Hahn, Chem. Commun., 2014, 50, 1890
    DOI: 10.1039/C3CC48197B

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