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Issue 10, 2014
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Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature

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Abstract

We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical Benkeser reduction using lithium and ethylenediamine.

Graphical abstract: Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature

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Publication details

The article was received on 21 Sep 2013, accepted on 30 Oct 2013 and first published on 30 Oct 2013


Article type: Communication
DOI: 10.1039/C3CC47224H
Citation: Chem. Commun., 2014,50, 1224-1226
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    Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature

    L. Wang, Y. Park, P. Cui, S. Bak, H. Lee, S. M. Lee and H. Lee, Chem. Commun., 2014, 50, 1224
    DOI: 10.1039/C3CC47224H

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