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Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature

Corresponding authors
National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry and Energy Science and SKKU Advanced Institute Nano Technology, Sungkyunkwan University, 2066 Seoburo, Jangan-Gu, Suwon, South Korea
Fax: +82-31-299-5934
Tel: +82-31-299-4566
Chem. Commun., 2014,50, 1224-1226

DOI: 10.1039/C3CC47224H
Received 21 Sep 2013, Accepted 30 Oct 2013
First published online 30 Oct 2013
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