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Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature

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Corresponding authors
a
National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry and Energy Science and SKKU Advanced Institute Nano Technology, Sungkyunkwan University, 2066 Seoburo, Jangan-Gu, Suwon, South Korea
E-mail: hyoyoung@skku.edu
Fax: +82-31-299-5934
Tel: +82-31-299-4566
Chem. Commun., 2014,50, 1224-1226

DOI: 10.1039/C3CC47224H
Received 21 Sep 2013, Accepted 30 Oct 2013
First published online 30 Oct 2013
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