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Issue 3, 2014
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Chemically doped perylene diimide lamellae based field effect transistor with low operating voltage and high charge carrier mobility

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Abstract

Chemical doping of an electron transporter results in the formation of a radical anion containing semiconductor which showed high electron mobility (13 cm2 V−1 s−1) at low operating voltage (1 V).

Graphical abstract: Chemically doped perylene diimide lamellae based field effect transistor with low operating voltage and high charge carrier mobility

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Publication details

The article was received on 16 Jul 2013, accepted on 25 Oct 2013 and first published on 28 Oct 2013


Article type: Communication
DOI: 10.1039/C3CC45391J
Citation: Chem. Commun., 2014,50, 326-328
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    Chemically doped perylene diimide lamellae based field effect transistor with low operating voltage and high charge carrier mobility

    A. Arulkashmir, B. Jain, J. C. John, K. Roy and K. Krishnamoorthy, Chem. Commun., 2014, 50, 326
    DOI: 10.1039/C3CC45391J

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