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Issue 73, 2013
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Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

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Abstract

Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.

Graphical abstract: Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

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Publication details

The article was received on 19 Jun 2013, accepted on 12 Jul 2013 and first published on 12 Jul 2013


Article type: Communication
DOI: 10.1039/C3CC44578J
Citation: Chem. Commun., 2013,49, 8075-8077
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    Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

    Y. Liu, J. Lan, W. Xu, Y. Liu, Y. Pei, B. Cheng, D. Liu, Y. Lin and L. Zhao, Chem. Commun., 2013, 49, 8075
    DOI: 10.1039/C3CC44578J

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