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Issue 47, 2013
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Antiaromatic planar cyclooctatetraene: a strategy for developing ambipolar semiconductors for field effect transistors

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Abstract

Tetra[2,3-thienylene] planarised by sulphur bridges and radially π-extended with (triisopropylsilyl)ethynyl groups had a narrow HOMO–LUMO gap due to the antiaromatic cyclooctatetraene core, and its single crystal FET device exhibited ambipolar characteristics with hole and electron mobilities of up to 0.40 and 0.18 cm2 V−1 s−1, respectively.

Graphical abstract: Antiaromatic planar cyclooctatetraene: a strategy for developing ambipolar semiconductors for field effect transistors

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Publication details

The article was received on 08 Mar 2013, accepted on 31 Mar 2013 and first published on 03 Apr 2013


Article type: Communication
DOI: 10.1039/C3CC41764F
Citation: Chem. Commun., 2013,49, 5354-5356
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    Antiaromatic planar cyclooctatetraene: a strategy for developing ambipolar semiconductors for field effect transistors

    T. Nishinaga, T. Ohmae, K. Aita, M. Takase, M. Iyoda, T. Arai and Y. Kunugi, Chem. Commun., 2013, 49, 5354
    DOI: 10.1039/C3CC41764F

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