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Issue 27, 2013
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Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp

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Abstract

Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm2 V−1 s−1 after sintering at 300 °C.

Graphical abstract: Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp

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Publication details

The article was received on 06 Nov 2012, accepted on 06 Feb 2013 and first published on 07 Feb 2013


Article type: Communication
DOI: 10.1039/C3CC38021A
Citation: Chem. Commun., 2013,49, 2783-2785
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    Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp

    K. Seong, K. Kim, S. Y. Park and Y. S. Kim, Chem. Commun., 2013, 49, 2783
    DOI: 10.1039/C3CC38021A

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