Electric field-induced hole transport in copper(I) thiocyanate (CuSCN) thin-films processed from solution at room temperature

Pichaya Pattanasattayavong; Guy Olivier Ngongang Ndjawa; Kui Zhao; Kang Wei Chou; Nir Yaacobi-Gross; Brian C. O'Regan; Aram Amassian; Thomas D. Anthopoulos

doi:10.1039/C2CC37065D

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Chemical Communications

Issue 39, 2013

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Electric field-induced hole transport in copper(I) thiocyanate (CuSCN) thin-films processed from solution at room temperature

Pichaya Pattanasattayavong,^a Guy Olivier Ngongang Ndjawa,^b Kui Zhao,^b Kang Wei Chou,^b Nir Yaacobi-Gross,^a Brian C. O'Regan,^c Aram Amassian^b and Thomas D. Anthopoulos*^a

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Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, UK
E-mail: t.anthopoulos@ic.ac.uk ;
Fax: +44 (0)2075942077 ;
Tel: +44 (0)2075946669

Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

Department of Chemistry and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, UK

Chem. Commun., 2013,49, 4154-4156

DOI: 10.1039/C2CC37065D
Received 28 Sep 2012, Accepted 21 Nov 2012
First published online 22 Nov 2012

This article is part of themed collection: Emerging Investigators 2013

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Abstract
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The optical, structural and charge transport properties of solution-processed films of copper(I) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of [similar] 20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01–0.1 cm² V⁻¹ s⁻¹.