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Issue 2, 2012
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Tunable electrical memory characteristics by the morphology of self-assembled block copolymers:PCBM nanocomposite films

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Abstract

Resistive switchable memory devices were fabricated using self-assembled composite thin films of asymmetric poly(styrene-block-4-vinylpyridine) (PS-b-P4VP) block copolymers (BCP) and fullerene derivatives (PCBM). L1 (with a longer PS block) was comprised of discrete vertical P4VP nanocylinders embedded within the PS matrix whereas L2 (with a longer P4VP block) revealed a reverse morphology with a horizontal orientation. They were used to control the spatial location or distribution of the PCBM and the resultant memory characteristics. The devices with ITO/BCP:PCBM/Al configurations exhibited variable multi-electronic characteristics, changing from insulating to bistable memory switching and highly conducting, as the PCBM content increased. The L1:PCBM memory device showed non-volatile write-once-read-many-times (WORM) memory behavior but the L2:PCBM device exhibited a volatile nature of static random access memory (SRAM). Both L1 and L2:PCBM composite devices revealed the improved switching performance upon solvent annealing procedures of the composite thin film. Our results suggested that the controlled morphology of the BCP/PCBM composite could create nanoscale charge-storage elements for a high density memory device with a reduced bit cell size.

Graphical abstract: Tunable electrical memory characteristics by the morphology of self-assembled block copolymers:PCBM nanocomposite films

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Publication details

The article was received on 25 Aug 2011, accepted on 11 Oct 2011 and first published on 03 Nov 2011


Article type: Paper
DOI: 10.1039/C1SM06622F
Citation: Soft Matter, 2012,8, 526-535
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    Tunable electrical memory characteristics by the morphology of self-assembled block copolymers:PCBM nanocomposite films

    J. Chen, C. Liu, Y. Sun, S. Tung and W. Chen, Soft Matter, 2012, 8, 526
    DOI: 10.1039/C1SM06622F

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