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Paper

Effect of stress state on the domain configuration and switching behavior in ferroelectric thin films

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Corresponding authors
a
Energy Systems Division, Argonne National Laboratory, Argonne, USA
E-mail: mnarayanan@anl.gov
b
Materials Science Division, Argonne National Laboratory, Argonne, USA
E-mail: hong@anl.gov
c
College of Engineering and Applied Science, University of Cincinnati, Cincinnati, USA
d
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, USA
RSC Adv., 2012,2, 11901-11907

DOI: 10.1039/C2RA20678A
Received 13 Apr 2012, Accepted 03 Oct 2012
First published online 29 Oct 2012
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