Reliable graphenes grown by rapid-thermal pulse chemical vapor deposition (CVD) for electrode applications were selectively patterned under optimum conditions for argon rf plasma power and etching time. For the transparent and the flexible capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) dielectric films grown at room temperature, the graphene top and bottom electrodes were integrated onto the polymer substrates. The graphene/BMNO/graphene/Ti/polyethersulfone (PES) capacitors showed typical dielectric and leakage properties for capacitors. The adhesion between substrates and the graphene should be critically considered in order to improve the leakage properties of the capacitors. Graphene that possessed a high bendability was the predominant candidate for application to the top and bottom electrodes of the transparent and flexible capacitors.
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