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Issue 15, 2012
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p-type Phosphorus doped ZnO nanostructures: an electrical, optical, and magnetic properties study

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Abstract

Well-arranged/self-assembled ZnO platelets with durable and reproducible p-type conductivity were synthesized using PCl5 as a dopant source via a simple low cost aqueous based chemical approach. Scanning electron microscopy and selected area diffraction pattern reveal pristine and doped ZnO nanostructures which are single-crystalline and grown predominantly along the [0002] direction. Split UV emission peaks in the photoluminescence spectra are located at 3.324 and 3.2714 eV, which could be attributed to acceptor bound exciton and free electrons to the acceptor emission, respectively. The relative intensity of defect-related broad-band emission (with respect to UV emission) ranging from 480–750 nm is enhanced significantly (ID/IUV = 1–0.056) in doped nanostructures, rendering the creation of defects. A systematic evaluation of room temperature ferromagnetism is found in pristine and doped ZnO nanostructures. p-type Doping is confirmed by photoluminescence spectra and the IV characteristic of phosphorus doped ZnO nanoplatelets.

Graphical abstract: p-type Phosphorus doped ZnO nanostructures: an electrical, optical, and magnetic properties study

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Publication details

The article was received on 09 Mar 2012, accepted on 30 Apr 2012 and first published on 01 May 2012


Article type: Paper
DOI: 10.1039/C2RA20441J
Citation: RSC Adv., 2012,2, 6222-6227
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    p-type Phosphorus doped ZnO nanostructures: an electrical, optical, and magnetic properties study

    B. Panigrahy and D. Bahadur, RSC Adv., 2012, 2, 6222
    DOI: 10.1039/C2RA20441J

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