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Electronic and magnetic properties of boron nitride nanoribbons with topological line defects

Corresponding authors
Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, People's Republic of China
The Key Laboratory of Computational Physics, Institute of Applied Physics and Computational Mathematics, P. O. Box 8009, People's Republic of China
RSC Adv., 2012,2, 6192-6199

DOI: 10.1039/C2RA20306E
Received 20 Feb 2012, Accepted 20 Apr 2012
First published online 25 Apr 2012
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