Issue 4, 2012

On-chip diameter-dependent conversion of metallic to semiconducting single-walled carbon nanotubes by immersion in 2-ethylanthraquinone

Abstract

The key hurdle to the practical use of as-grown single-walled carbon nanotubes (SWNTs) for high performance nanoelectronics is the unavoidable presence of metallic nanotubes with current synthesis methods. We present a simple approach to convert metallic SWNTs to semiconducting ones in situ to improve device field effect behaviour, using an aromatic compound (2-ethylanthraquinone - EAQ) which is a mild radical initiator. We show that the reaction between EAQ-generated radicals and SWNTs is diameter and metallicity dependent; in the medium-diameter regime (0.8 to 1.0 nm), the EAQ-generated radicals preferentially attack the metallic SWNTs over semiconducting ones and convert them to semiconducting, as evidenced by several orders (10 and 104) increase in the on/off ratio.

Graphical abstract: On-chip diameter-dependent conversion of metallic to semiconducting single-walled carbon nanotubes by immersion in 2-ethylanthraquinone

Article information

Article type
Communication
Submitted
30 Sep 2011
Accepted
19 Nov 2011
First published
22 Dec 2011

RSC Adv., 2012,2, 1275-1281

On-chip diameter-dependent conversion of metallic to semiconducting single-walled carbon nanotubes by immersion in 2-ethylanthraquinone

J. Li, X. Luan, Y. Huang, S. Dunham, P. Chen, J. A. Rogers and M. B. Chan-Park, RSC Adv., 2012, 2, 1275 DOI: 10.1039/C1RA00817J

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