Issue 19, 2012

Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode

Abstract

A NiOx buffer layer is introduced in GaN-based light-emitting diodes to form low resistance ohmic contacts between p-type GaN and graphene conductive electrodes, leading to improved performance with lower operating voltage and higher light output power.

Graphical abstract: Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode

Article information

Article type
Communication
Submitted
05 May 2012
Accepted
06 Aug 2012
First published
08 Aug 2012

Nanoscale, 2012,4, 5852-5855

Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode

Y. Zhang, X. Li, L. Wang, X. Yi, D. Wu, H. Zhu and G. Wang, Nanoscale, 2012, 4, 5852 DOI: 10.1039/C2NR31986A

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