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Issue 19, 2012
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Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode

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Abstract

A NiOx buffer layer is introduced in GaN-based light-emitting diodes to form low resistance ohmic contacts between p-type GaN and graphene conductive electrodes, leading to improved performance with lower operating voltage and higher light output power.

Graphical abstract: Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode

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Publication details

The article was received on 05 May 2012, accepted on 06 Aug 2012 and first published on 08 Aug 2012


Article type: Communication
DOI: 10.1039/C2NR31986A
Citation: Nanoscale, 2012,4, 5852-5855
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    Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode

    Y. Zhang, X. Li, L. Wang, X. Yi, D. Wu, H. Zhu and G. Wang, Nanoscale, 2012, 4, 5852
    DOI: 10.1039/C2NR31986A

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