Issue 18, 2012

The use of PEEK nanorod arrays for the fabrication of nanoporous surfaces under high temperature: SiNx example

Abstract

Large area silicon nitride (SiNx) nanoporous surfaces are fabricated using poly(ether-ether-ketone) (PEEK) nanorod arrays as a template. The procedure involves manipulation of nanoporous anodic aluminum oxide (AAO) templates in order to form an ordered array of PEEK nanopillars with high temperature resistant characteristics. In this context, self-ordered AAO templates are infiltrated with PEEK melts via the “precursor film” method. Once the melts have been crystallized in the porous structure of AAO, the basis alumina layer is removed, yielding an ordered array of PEEK nanopillars. The resulting structure is a high temperature and chemical resistant polymeric nanomold, which can be utilized in the synthesis of nanoporous materials under aggressive conditions. Such conditions are high temperatures (up to 320 °C), vacuum, or extreme pH. For example, SiNx nanopore arrays have been grown by plasma enhanced chemical vapor deposition at 300 °C, which can be of interest as mold for nanoimprint lithography, due to its hardness and low surface energy. The SiNx nanopore array portrays the same characteristics as the original AAO template: 120 nm diameter pores and an interpore distance of 430 nm. Furthermore, the aspect ratio of the SiNx nanopores can be tuned by selecting an AAO template with appropriate conditions. The use of PEEK as a nanotemplate extends the applicability of polymeric nanopatterns into a temperature regime up to now not accessible and opens up the simple fabrication of novel nanoporous inorganic surfaces.

Graphical abstract: The use of PEEK nanorod arrays for the fabrication of nanoporous surfaces under high temperature: SiNx example

Article information

Article type
Paper
Submitted
13 Apr 2012
Accepted
18 Jun 2012
First published
29 Jun 2012

Nanoscale, 2012,4, 5608-5613

The use of PEEK nanorod arrays for the fabrication of nanoporous surfaces under high temperature: SiNx example

J. Martín and M. Martín-González, Nanoscale, 2012, 4, 5608 DOI: 10.1039/C2NR30885A

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