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Issue 11, 2012
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Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example

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Abstract

We demonstrated a nanocontacting scheme using a focus ion beam (FIB) system without further heat treatment for ZnO nanowires. This scheme includes Ga ion surface modification and direct-write Pt deposition induced by Ga ion, leading to an Ohmic nanocontact with a specific contact resistance as low as 2.5 × 10−6 Ω cm2. Temperature-dependent measurements show that the transport of the FIB-Pt contact on the ZnO nanowire with local surface modification is governed by field emission tunneling. Taking advantage of area-selected and room-temperature processes, Ga ion surface modification and direct-write Pt deposition using a FIB system demonstrates a feasible Ohmic scheme.

Graphical abstract: Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example

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Publication details

The article was received on 05 Jul 2011, accepted on 14 Apr 2012 and first published on 23 Apr 2012


Article type: Paper
DOI: 10.1039/C2NR30688C
Citation: Nanoscale, 2012,4, 3399-3404
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    Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example

    J. He, J. Ke, P. Chang, K. Tsai, P. C. Yang and I. Chan, Nanoscale, 2012, 4, 3399
    DOI: 10.1039/C2NR30688C

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