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Feature Article

Nanoscale phase change memory materials

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Corresponding authors
a
Department of Chemistry, Stanford University, Stanford, USA
b
Department of Electrical Engineering, Stanford University, Stanford, USA
c
The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, USA
E-mail: dmilliron@lbl.gov
Nanoscale, 2012,4, 4382-4392

DOI: 10.1039/C2NR30541K
Received 06 Mar 2012, Accepted 14 May 2012
First published online 27 Jun 2012
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