Jump to main content
Jump to site search

Issue 10, 2012
Previous Article Next Article

Transparent metal oxide nanowire transistors

Author affiliations

Abstract

With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive review of the state-of-the-art research activities that focus on transparent metal oxide nanowire transistors. It begins with the brief introduction to the synthetic methods for high quality metal oxide nanowires, and the typical nanowire transfer and printing techniques with emphasis on the simple contact printing methodology. High performance transparent transistors built on both single nanowires and nanowire thin films are then highlighted. The final section deals with the applications of transparent metal oxide nanowire transistors in the field of transparent displays and concludes with an outlook on the current perspectives and future directions of transparent metal oxide nanowire transistors.

Graphical abstract: Transparent metal oxide nanowire transistors

Back to tab navigation

Publication details

The article was received on 25 Feb 2012, accepted on 16 Mar 2012 and first published on 20 Mar 2012


Article type: Feature Article
DOI: 10.1039/C2NR30445G
Citation: Nanoscale, 2012,4, 3001-3012
  •   Request permissions

    Transparent metal oxide nanowire transistors

    D. Chen, Z. Liu, B. Liang, X. Wang and G. Shen, Nanoscale, 2012, 4, 3001
    DOI: 10.1039/C2NR30445G

Search articles by author

Spotlight

Advertisements