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Paper

Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

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a
Laboratoire des Materiaux Semiconducteurs, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne, Switzerland
E-mail: anna.fontcuberta-morral@epfl.ch;
Fax: +41 21 693 ;
Tel: +41 21 693 73 94
b
Nano-Science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
c
Instituto de Nanociencia de Aragon-ARAID and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza, Spain
d
Catalonia Institute for Energy Research, IREC, 08930 Sant Adrià del Besòs, Spain
e
Department dÉlectrònica, Universitat de Barcelona, 08028 Barcelona, Spain
f
Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, E-08193 Bellaterra, Spain
Nanoscale, 2012,4, 1486-1490

DOI: 10.1039/C2NR11799A
Received 20 Nov 2011, Accepted 15 Jan 2012
First published online 19 Jan 2012
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