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Issue 5, 2012
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Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

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Abstract

Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by changing the relative size between the GaAs seed and the Ga droplet. We demonstrate how growing under high V/III ratio results in a 100% yield of vertical nanowires on silicon(111). These results open up the avenue towards the efficient integration of III–V nanowire arrays on the silicon platform.

Graphical abstract: Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

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Publication details

The article was received on 20 Nov 2011, accepted on 15 Jan 2012 and first published on 19 Jan 2012


Article type: Paper
DOI: 10.1039/C2NR11799A
Citation: Nanoscale, 2012,4, 1486-1490
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    Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

    E. Russo-Averchi, M. Heiss, L. Michelet, P. Krogstrup, J. Nygard, C. Magen, J. R. Morante, E. Uccelli, J. Arbiol and A. Fontcuberta i Morral, Nanoscale, 2012, 4, 1486
    DOI: 10.1039/C2NR11799A

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