A novel direct-write approach is presented, which relies on area-selective atomic layer deposition on seed layer patterns deposited by electron beam induced deposition. The method enables the nanopatterning of high-quality material with a lateral resolution of only ![[similar]](http://www.rsc.org/images/entities/char_223c.gif)
10 nm. Direct-write ALD is a viable alternative to lithography-based patterning with a better compatibility with sensitive nanomaterials.
Nanoscale
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