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Issue 11, 2012
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Intrinsic energy dissipation in CVD-grown graphene nanoresonators

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Abstract

We utilize classical molecular dynamics to study the quality (Q)-factors of monolayer CVD-grown graphene nanoresonators. In particular, we focus on the effects of intrinsic grain boundaries of different orientations, which result from the CVD growth process, on the Q-factors. For a range of misorientation angles that are consistent with those seen experimentally in CVD-grown graphene, i.e. 0° to ∼20°, we find that the Q-factors for graphene with intrinsic grain boundaries are 1–2 orders of magnitude smaller than that of pristine monolayer graphene. We find that the Q-factor degradation is strongly influenced by both the symmetry and structure of the 5-7 defect pairs that occur at the grain boundary. Because of this, we also demonstrate that the Q-factors of CVD-grown graphene can be significantly elevated, and approach that of pristine graphene, through application of modest (1%) tensile strain.

Graphical abstract: Intrinsic energy dissipation in CVD-grown graphene nanoresonators

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Publication details

The article was received on 29 Feb 2012, accepted on 28 Mar 2012, published on 02 Apr 2012 and first published online on 02 Apr 2012


Article type: Paper
DOI: 10.1039/C2NR30493G
Citation: Nanoscale, 2012,4, 3460-3465
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    Intrinsic energy dissipation in CVD-grown graphene nanoresonators

    Z. Qi and H. S. Park, Nanoscale, 2012, 4, 3460
    DOI: 10.1039/C2NR30493G

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