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Issue 10, 2012
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Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication

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Abstract

Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

Graphical abstract: Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication

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Publication details

The article was received on 11 Feb 2012, accepted on 23 Mar 2012 and first published on 29 Mar 2012


Article type: Communication
DOI: 10.1039/C2NR30330B
Citation: Nanoscale, 2012,4, 3050-3054
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    Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication

    H. J. Song, M. Son, C. Park, H. Lim, M. P. Levendorf, A. W. Tsen, J. Park and H. C. Choi, Nanoscale, 2012, 4, 3050
    DOI: 10.1039/C2NR30330B

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