Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication

Hyun Jae Song; Minhyeok Son; Chibeom Park; Hyunseob Lim; Mark P. Levendorf; Adam W. Tsen; Jiwoong Park; Hee Cheul Choi

doi:10.1039/C2NR30330B

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Nanoscale

Issue 10, 2012

A new peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology

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Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication

Hyun Jae Song,^a Minhyeok Son,^a Chibeom Park,^a Hyunseob Lim,^a Mark P. Levendorf,^b Adam W. Tsen,^b Jiwoong Park^b and Hee Cheul Choi*^a

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Department of Chemistry and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam-Gu, Pohang, 790-784 Korea
E-mail: choihc@postech.edu ;
Fax: +82 54-279-3399 ;
Tel: +82 54-279-2130

Department of Chemistry and Chemical Biology, Cornell University, Ithaca, USA ;
Fax: +1 607-255-4137 ;
Tel: +1 607-254-3339

Nanoscale, 2012,4, 3050-3054

DOI: 10.1039/C2NR30330B
Received 11 Feb 2012, Accepted 23 Mar 2012
First published online 29 Mar 2012

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Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

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Hyun Jae Song
Minhyeok Son
Chibeom Park
Hyunseob Lim
Mark P. Levendorf
Adam W. Tsen
Jiwoong Park
Hee Cheul Choi

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Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication

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