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Issue 2, 2012
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Atomically thin layers of MoS2via a two step thermal evaporation–exfoliation method

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Abstract

Two dimensional molybdenum disulfide (MoS2) has recently become of interest to semiconductor and optic industries. However, the current methods for its synthesis require harsh environments that are not compatible with standard fabrication processes. We report on a facile synthesis method of layered MoS2 using a thermal evaporation technique, which requires modest conditions. In this process, a mixture of MoS2 and molybdenum dioxide (MoO2) is produced by evaporating sulfur powder and molybdenum trioxide (MoO3) nano-particles simultaneously. Further annealing in a sulfur-rich environment transforms majority of the excess MoO2 into layered MoS2. The deposited MoS2 is then mechanically exfoliated into minimum resolvable atomically thin layers, which are characterized using micro-Raman spectroscopy and atomic force microscopy. Furthermore Raman spectroscopy is employed to determine the effect of electrochemical lithium ion exposure on atomically thin layers of MoS2.

Graphical abstract: Atomically thin layers of MoS2via a two step thermal evaporation–exfoliation method

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Publication details

The article was received on 13 Jul 2011, accepted on 09 Oct 2011 and first published on 07 Nov 2011


Article type: Paper
DOI: 10.1039/C1NR10803D
Citation: Nanoscale, 2012,4, 461-466
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    Atomically thin layers of MoS2via a two step thermal evaporation–exfoliation method

    S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov and K. Kalantar-zadeh, Nanoscale, 2012, 4, 461
    DOI: 10.1039/C1NR10803D

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