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Issue 32, 2012
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Electrically controlled electron transfer and resistance switching in reduced graphene oxide noncovalently functionalized with thionine

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Abstract

We demonstrate the electrically controlled electron transfer of thionine-functionalized reduced graphene oxide (rGO–th) in the form of a homogeneous solution and films. The electron transfer can be realized in a bidirectional way, which provides a method to control the electronic properties of graphene through π–π noncovalent functionalization. Based on the aforementioned controllable electron transfer between graphene sheets and thionine, resistance random access memories with a configuration of Pt/rGO–th/Pt were fabricated and show nonvolatile resistive switching with a large ON/OFF ratio of more than 104, fast switching speed of <5 ns, long retention time of over 105 s and excellent endurance. Furthermore, the reverse electron transfer between thionine and rGO as well as the resistive switching mechanism of the Pt/rGO–th/Pt devices were confirmed by density functional theory (DFT) calculation.

Graphical abstract: Electrically controlled electron transfer and resistance switching in reduced graphene oxide noncovalently functionalized with thionine

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Publication details

The article was received on 05 Apr 2012, accepted on 19 Jun 2012 and first published on 21 Jun 2012


Article type: Paper
DOI: 10.1039/C2JM32121A
Citation: J. Mater. Chem., 2012,22, 16422-16430
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    Electrically controlled electron transfer and resistance switching in reduced graphene oxide noncovalently functionalized with thionine

    B. Hu, R. Quhe, C. Chen, F. Zhuge, X. Zhu, S. Peng, X. Chen, L. Pan, Y. Wu, W. Zheng, Q. Yan, J. Lu and R. Li, J. Mater. Chem., 2012, 22, 16422
    DOI: 10.1039/C2JM32121A

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