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Issue 32, 2012
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Hybrid solution processed InGaO3(ZnO)m thin films with periodic layered structures and thermoelectric properties

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Abstract

Short period superlattices comprising alternating InO2 and GaO+(ZnO)2 layers were fabricated by a simple hybrid solution process and reactive solid-phase epitaxy at high temperature. The epitaxial ZnO buffer layer deposited by sputtering, and an amorphous IGZO layer fabricated from a solution mixture of 1 : 1 : 1.0 (In nitrate : Ga nitrate : Zn acetate) produced pure, single-phase InGaO3(ZnO)2 films with a well-ordered layered structure and smooth surfaces, which showed intense periodic diffraction peaks. Deviation from the stoichiometric sol condition induced coexisting InGaO3(ZnO)2 and other InGaO3(ZnO)m phases and very rough surface morphologies. The solid-phase epitaxy of a single phase decreased electrical resistivity, increased the Seebeck coefficient, and significantly improved the power factor. An extremely low thermal conductivity (1.11 W m−1 K−1) was also obtained due to phonon scattering at the InO2 and GaO+(ZnO)2 interfaces by the formation of the superlattice structure. This solution-based fabrication of superlattice structures could aid the development of advanced multicomponent oxides due to its simple growth process and the adaptability of compositions.

Graphical abstract: Hybrid solution processed InGaO3(ZnO)m thin films with periodic layered structures and thermoelectric properties

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Publication details

The article was received on 28 Dec 2011, accepted on 19 Jun 2012 and first published on 10 Jul 2012


Article type: Paper
DOI: 10.1039/C2JM16887A
Citation: J. Mater. Chem., 2012,22, 16312-16317
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    Hybrid solution processed InGaO3(ZnO)m thin films with periodic layered structures and thermoelectric properties

    J. H. Kim, D. K. Seo, C. H. Ahn, S. W. Shin, H. H. Cho and H. K. Cho, J. Mater. Chem., 2012, 22, 16312
    DOI: 10.1039/C2JM16887A

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