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Issue 13, 2012
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Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons

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Abstract

Sb-doped ZnTe nanoribbons (NRs) with enhanced p-type conductivity were successfully synthesized by a simple thermal co-evaporation method. Nanodevices, including nano-field-effect transistors (FETs) and nano-photodetectors (nanoPDs), were constructed based on the ZnTe:Sb NRs and their structure dependent device performances were systemically investigated. It is found that the transport properties of the ZnTe nanostructures as well as the device structures play a critical role in determining the device performances. In contrast to the nano-metal-oxide-semiconductor FETs (nanoMOSFETs) with back-gate structure, the top-gate nano-metal-insulator-semiconductor FETs (nanoMISFETs) show much enhanced performances in all aspects. On the other hand, owing to the appropriate p-type doping, nano-photodetectors (nanoPDs) based on the ZnTe:Sb NRs exhibit excellent device performances, such as high responsivity and photoconductive gain, fast response speed, large detectivity and so on. Moreover, the response time could be effectively shortened by using nano-heterojunction photodetectors (nanoHPDs). It is expected that knowledge gained from this work could be readily extended to nanodevices based on other nanostructures.

Graphical abstract: Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons

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Publication details

The article was received on 16 Dec 2011, accepted on 02 Feb 2012 and first published on 17 Feb 2012


Article type: Paper
DOI: 10.1039/C2JM16632A
Citation: J. Mater. Chem., 2012,22, 6206-6212
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    Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons

    D. Wu, Y. Jiang, Y. Zhang, J. Li, Y. Yu, Y. Zhang, Z. Zhu, L. Wang, C. Wu, L. Luo and J. Jie, J. Mater. Chem., 2012, 22, 6206
    DOI: 10.1039/C2JM16632A

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