Transferability of solution processed epitaxial Ga:ZnO films; tailored for gas sensor and transparent conducting oxide applications

Abstract

Problems associated with the costly production of Ga doped ZnO (Ga:ZnO) related to high-quality epitaxial films, which can only be grown on a lattice-matched single-crystal substrate using a vacuum system, have limited its wide-scale commercial applications. Moreover, for many practical applications, large-area devices must be fabricated on non-epitaxial glass, metal and other substrates. Here, we demonstrate a cost effective, low temperature aqueous synthesis, doping and transfer of high quality epitaxial Ga:ZnO on a non-epitaxial substrate. The capability of transferring epitaxial Ga:ZnO films may promote quick deployment of these high quality films for various electronic applications. We conclude the work with the demonstration of the Ga:ZnO films for gas sensing and dye-sensitized solar cell (DSSC) applications.