Atomic layer deposition of tin oxide with nitric oxide as an oxidant gas

Jaeyeong Heo; Sang Bok Kim; Roy G. Gordon

doi:10.1039/C2JM16557K

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Journal of Materials Chemistry

Issue 11, 2012

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Atomic layer deposition of tin oxide with nitric oxide as an oxidant gas

Jaeyeong Heo , Sang Bok Kim and Roy G. Gordon

J. Mater. Chem., 2012,22, 4599-4602

DOI: 10.1039/C2JM16557K
Received 13 Dec 2011, Accepted 16 Jan 2012
First published on the web 03 Feb 2012

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Abstract
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Atomic layer deposition (ALD) of tin oxide (SnO₂) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric oxide (NO) as an oxidant gas. Film properties as a function of growth temperature from 130–250 °C were studied. Highly conducting SnO₂ films were obtained at 200–250 °C with the growth per cycle of [similar] 1.4 Å/cycle, while insulating films were grown at temperatures lower than 200 °C. Conformal growth of SnO₂ in holes of aspect-ratios up to 50:1 was successfully demonstrated.