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Issue 14, 2012
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Preparation of photoactive ZnGeP2 nanowire films

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Abstract

Photoactive ZnGeP2 nanowires have been prepared by solid-source sublimation chemical vapor deposition using Sn catalysts. Nanowire films with areas >0.5 cm2 on Si(100) and Si(111) substrates were deposited with variable nanowire length and diameter. Transmission electron microscopy (TEM), scanning TEM (STEM), and polarized Raman microscopy indicated nanowires exhibited single-crystal character and compositional homogeneity. Photoelectrochemical measurements performed in an aqueous electrolyte indicated the as-prepared ZnGeP2 nanowires were p-type and capable of passing sustained cathodic photocurrents under white light illumination. The presented results identify a straight-forward approach to the preparation of II–IV–V2 nanowire films with features suitable for optical and photoelectrochemical energy conversion/storage applications.

Graphical abstract: Preparation of photoactive ZnGeP2 nanowire films

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Publication details

The article was received on 08 Dec 2011, accepted on 13 Feb 2012 and first published on 24 Feb 2012


Article type: Paper
DOI: 10.1039/C2JM16453A
Citation: J. Mater. Chem., 2012,22, 6613-6622
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    Preparation of photoactive ZnGeP2 nanowire films

    S. M. Collins, J. M. Hankett, A. I. Carim and S. Maldonado, J. Mater. Chem., 2012, 22, 6613
    DOI: 10.1039/C2JM16453A

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