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Issue 5, 2012
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Highly scalable resistive switching memory cells using pore-size-controlled nanoporous alumina templates

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Abstract

Nanoscale resistive switching memory cells with controlled cell sizes in the range of 25 to 90 nm were successfully fabricated using anodized aluminum oxide templates, and their electrical properties were directly measured using a conductive atomic force microscope. The size of the memory cells was systematically controlled by controlling the pore size of the nanoscale masks. The devices exhibited controllable and reliable resistive switching characteristics suitable for programmable memory applications. The reported approach provides new opportunities for the preparation of nanostructured nonvolatile memory devices with continued device scaling.

Graphical abstract: Highly scalable resistive switching memory cells using pore-size-controlled nanoporous alumina templates

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Publication details

The article was received on 15 Sep 2011, accepted on 28 Oct 2011 and first published on 05 Dec 2011


Article type: Paper
DOI: 10.1039/C1JM14592D
Citation: J. Mater. Chem., 2012,22, 1852-1861
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    Highly scalable resistive switching memory cells using pore-size-controlled nanoporous alumina templates

    S. Lyu and J. Lee, J. Mater. Chem., 2012, 22, 1852
    DOI: 10.1039/C1JM14592D

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