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Issue 4, 2012
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A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene

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Abstract

Graphene has attracted considerable interest as a potential material for future electronics. Although mechanical peel is known to produce high quality graphene flakes, practical applications require continuous graphene layers over a large area. The catalyst-assisted chemical vapor deposition (CVD) is a promising synthetic method to deliver wafer-sized graphene. Here we present a systematic study on the nucleation and growth of crystallized graphene domains in an atmospheric pressure chemical vapor deposition (APCVD) process. Parametric studies show that the mean size of the graphene domains increases with increasing growth temperature and CH4 partial pressure, while the density of domains decreases with increasing growth temperature and is independent of the CH4 partial pressure. Our studies show that nucleation of graphene domains on copper substrate is highly dependent on the initial annealing temperature. A two-step synthetic process with higher initial annealing temperature but lower growth temperature is developed to reduce domain density and achieve high quality full-surface coverage of monolayer graphene films. Electrical transport measurements demonstrate that the resulting graphene exhibits a high carrier mobility of up to 3000 cm2 Vāˆ’1 sāˆ’1 at room temperature.

Graphical abstract: A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene

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Publication details

The article was received on 30 Aug 2011, accepted on 26 Oct 2011 and first published on 24 Nov 2011


Article type: Paper
DOI: 10.1039/C1JM14272K
Citation: J. Mater. Chem., 2012,22, 1498-1503
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    A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene

    L. Liu, H. Zhou, R. Cheng, Y. Chen, Y. Lin, Y. Qu, J. Bai, I. A. Ivanov, G. Liu, Y. Huang and X. Duan, J. Mater. Chem., 2012, 22, 1498
    DOI: 10.1039/C1JM14272K

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