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Issue 4, 2012
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Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory

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Abstract

We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5 (GST)/TiN nanoarray prepared viablock copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: ∼207 Gbit inch−2) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 μA. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.

Graphical abstract: Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory

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Publication details

The article was received on 26 Aug 2011, accepted on 26 Oct 2011 and first published on 21 Nov 2011


Article type: Paper
DOI: 10.1039/C1JM14190B
Citation: J. Mater. Chem., 2012,22, 1347-1351
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    Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory

    J. M. Yoon, H. Y. Jeong, S. H. Hong, Y. Yin, H. S. Moon, S. Jeong, J. H. Han, Y. I. Kim, Y. T. Kim, H. Lee, S. O. Kim and J. Y. Lee, J. Mater. Chem., 2012, 22, 1347
    DOI: 10.1039/C1JM14190B

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