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Issue 5, 2012
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Biaxially-textured photovoltaic film crystal silicon on ion beam assisted deposition CaF2 seed layers on glass

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Abstract

We grow biaxially textured heteroepitaxial crystal silicon (c-Si) films on display glass as a low-cost photovoltaic material. We first fabricate textured CaF2 seed layers using ion-beam assisted deposition, then coat the CaF2 with a thin, evaporated epitaxial Ge buffer and finally deposit heteroepitaxial silicon on the Ge. The silicon is grown by hot-wire chemical vapor deposition, a high-rate, scalable epitaxy technology. Electron and X-ray diffraction confirm the biaxial texture of the CaF2 and epitaxial growth of the subsequent layers. Transmission electron microscopy reveals columnar silicon grains about 500 nm across. We fabricate a proof-of-concept epitaxial film c-Si solar cell with an open circuit voltage of 375 mV that is limited by minority carrier lifetime.

Graphical abstract: Biaxially-textured photovoltaic film crystal silicon on ion beam assisted deposition CaF2 seed layers on glass

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Publication details

The article was received on 11 Jan 2012, accepted on 28 Feb 2012 and first published on 29 Feb 2012


Article type: Communication
DOI: 10.1039/C2EE21097E
Citation: Energy Environ. Sci., 2012,5, 6905-6908
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    Biaxially-textured photovoltaic film crystal silicon on ion beam assisted deposition CaF2 seed layers on glass

    J. R. Groves, J. B. Li, B. M. Clemens, V. LaSalvia, F. Hasoon, H. M. Branz and C. W. Teplin, Energy Environ. Sci., 2012, 5, 6905
    DOI: 10.1039/C2EE21097E

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