Improved ambient operation of n-channel organic transistors of solution-sheared naphthalene diimide under bias stress

Abstract

Large arrays of n-channel organic thin film transistors of a core-chlorinated naphthalene diimide were processed by solution shearing on a silicon dioxide dielectric exhibiting ambient stable electron mobilities of up to 0.95 cm² V⁻¹ s⁻¹. Under bias stress an increase in effective charge carrier mobility of up to 4.26 cm² V⁻¹ s⁻¹ has been observed.