Identifying structural distortion in doped VO2 with IR spectroscopy

Ran Long; Bingyan Qu; Renchang Tan; Yongfu Sun; Xiaogang Tan; Wu Ying; Bicai Pan; Yujie Xiong; Yi Xie

doi:10.1039/C2CP40392G

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Physical Chemistry Chemical Physics

Issue 20, 2012

High quality research in physical chemistry, chemical physics and biophysical chemistry.

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Identifying structural distortion in doped VO₂ with IR spectroscopy

Ran Long,^a Bingyan Qu,^a Renchang Tan,^a Yongfu Sun,^a Xiaogang Tan,^a Wu Ying,^a Bicai Pan,^a Yujie Xiong*^a and Yi Xie*^a

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Hefei National Laboratory for Physical Sciences at Microscale, University of Science & Technology of China, Hefei, P.R. China
E-mail: yjxiong@ustc.edu.cn ;
Fax: 86 551 3603987 ;
Tel: 86 551 3603987

Phys. Chem. Chem. Phys., 2012,14, 7225-7228

DOI: 10.1039/C2CP40392G
Received 09 Feb 2012, Accepted 26 Mar 2012
First published online 26 Mar 2012

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Doping VO₂ with tungsten can lower the metal–insulator transition (MIT) temperature and thus provide a controlled means for tailoring the MIT properties of VO₂ materials. Here, infrared spectroscopy has been employed as a tool for identifying structural changes in doped VO₂ as a way of lowering the MIT temperature.

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Ran Long
Bingyan Qu
Renchang Tan
Yongfu Sun
Xiaogang Tan
Wu Ying
Bicai Pan
Yujie Xiong
Yi Xie

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