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Issue 22, 2012
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Electronic structures and transport properties of fluorinated boron nitride nanoribbons

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Abstract

By applying the nonequilibrium Green's functions and the density-functional theory, we investigate the electronic structures and transport properties of fluorinated zigzag-edged boron nitride nanoribbons. The results show that the transition between half-metal and semiconductor in zigzag-edged boron nitride nanoribbons can be realized by fluorination at different sites or by the change of the fluorination level. Moreover, the negative differential resistance and varistor-type behaviors can also be observed in such fluorinated zigzag-edged boron nitride nanoribbon devices. Therefore, the fluorination of zigzag-edged boron nitride nanoribbons will provide the possibilities for a multifunctional molecular device design.

Graphical abstract: Electronic structures and transport properties of fluorinated boron nitride nanoribbons

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Publication details

The article was received on 09 Dec 2011, accepted on 11 Apr 2012 and first published on 11 Apr 2012


Article type: Paper
DOI: 10.1039/C2CP23937J
Citation: Phys. Chem. Chem. Phys., 2012,14, 8032-8037
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    Electronic structures and transport properties of fluorinated boron nitride nanoribbons

    J. Zeng, K. Chen and C. Q. Sun, Phys. Chem. Chem. Phys., 2012, 14, 8032
    DOI: 10.1039/C2CP23937J

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