Issue 22, 2012

Fabrication of doped Cu-TCNQ nanocrystals and their optoelectronic properties

Abstract

We have successfully fabricated doped Cu-TCNQ nanocrystals, using the reprecipitation method involving a chemical reduction process, which took the composition ratio of Cu:TCNQ = 1.3:1 and contained both TCNQ anion and dianion. Interestingly, the doped nanocrystals exhibited a new strong absorption in NIR region, clearly dependent on the content of the TCNQ dianion.

Graphical abstract: Fabrication of doped Cu-TCNQ nanocrystals and their optoelectronic properties

  • This article is part of the themed collection: Nanocrystals

Supplementary files

Article information

Article type
Communication
Submitted
09 Jun 2012
Accepted
30 Jul 2012
First published
01 Aug 2012

CrystEngComm, 2012,14, 7586-7589

Fabrication of doped Cu-TCNQ nanocrystals and their optoelectronic properties

T. Onodera, S. Matsuo, K. Hiraishi, A. Masuhara, H. Kasai and H. Oikawa, CrystEngComm, 2012, 14, 7586 DOI: 10.1039/C2CE25926E

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