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Issue 16, 2012
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Preferential face deposition of gold nanoparticles on silicon nanowires by galvanic displacement

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Abstract

We report the preferential growth of gold nanoparticles on certain crystallographic facets of Si nanowires (NWs). Our synthetic approach uses galvanic displacement, an electroless deposition method; Si NWs act as the source of electrons required for the reduction of gold ions to metallic gold nanoparticles. Si NWs grown along the <112> growth direction have a characteristic rectangular cross-section with two each of (111) and (110) facets. Through detailed transmission electron microscopy (TEM) and TEM tomography, we were able to show the selective growth of gold nanoparticles on the Si(110) facets of the Si NWs with <112> growth directions; gold deposition was not observed on the Si(111) facets. These results may be related to the high reactivity of Si(110) facets towards gold deposition via galvanic displacement as compared to the reactivity of Si(111) facets.

Graphical abstract: Preferential face deposition of gold nanoparticles on silicon nanowires by galvanic displacement

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Publication details

The article was received on 22 Feb 2012, accepted on 04 May 2012 and first published on 11 May 2012


Article type: Paper
DOI: 10.1039/C2CE25254F
Citation: CrystEngComm, 2012,14, 5230-5234
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    Preferential face deposition of gold nanoparticles on silicon nanowires by galvanic displacement

    S. Y. Sayed, F. Wang, M. Malac, P. Li, D. Wang and J. Buriak, CrystEngComm, 2012, 14, 5230
    DOI: 10.1039/C2CE25254F

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