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Paper

Interrelation between atomic switching disorder and thermoelectric properties of ZrNiSn half-Heusler compounds

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Corresponding authors
a
Department of Materials Science and Engineering, Zhejiang University, China
E-mail: zhutj@zju.edu.cn;
Fax: +86-571-87951203 ;
Tel: +86-571-87952181
b
Center for Materials Crystallography, Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, DK-8000, Denmark
E-mail: bo@chem.au.dk ;
Tel: +45 8715 5982
CrystEngComm, 2012,14, 4467-4471

DOI: 10.1039/C2CE25119A
Received 25 Jan 2012, Accepted 05 Apr 2012
First published online 10 Apr 2012
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