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Issue 1, 2012
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Crystal growth, characterization and thin disk laser operation of KLu1−xTmx(WO4)2/KLu(WO4)2 epitaxial layers

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Abstract

Epitaxial samples of KLu1−xTmx(WO4)2/KLu(WO4)2 (x up to 0.15) have been obtained by the Liquid Phase Epitaxy (LPE) method. The lattice mismatch between the epitaxial layer and the substrate is small enough to allow the growth of good quality, well-oriented, single crystalline epilayers as evidenced by the 2θ scan of the (0k0) reflections and the rocking curve of the (040) reflection. Electron probe microanalysis shows an increase of 1021Tm3+ at cm−3 in a 2.5 μm interval at the substrate/layer interface. The main morphologies observed in the epilayers are steps and growth spirals. The laser operation around 2 μm, realized with epitaxial layers of 15 at% Tm doping and three different thicknesses, in a thin disk laser configuration with only two pump passes through the epitaxial layer, demonstrates maximum average output power as high as ∼1.4 W corresponding to a slope efficiency of 40%.

Graphical abstract: Crystal growth, characterization and thin disk laser operation of KLu1−xTmx(WO4)2/KLu(WO4)2 epitaxial layers

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Publication details

The article was received on 21 Jun 2011, accepted on 12 Sep 2011 and first published on 24 Oct 2011


Article type: Paper
DOI: 10.1039/C1CE05761H
Citation: CrystEngComm, 2012,14, 223-229
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    Crystal growth, characterization and thin disk laser operation of KLu1−xTmx(WO4)2/KLu(WO4)2 epitaxial layers

    M. Segura, R. M. Solé, X. Mateos, J. J. Carvajal, M. C. Pujol, J. Massons, M. Aguiló, S. Vatnik, I. Vedin, V. Petrov, U. Griebner and F. Díaz, CrystEngComm, 2012, 14, 223
    DOI: 10.1039/C1CE05761H

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