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Issue 90, 2012
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FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

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Abstract

Hole mobility was evaluated by top-contact bottom gate field effect transistor and time resolved microwave conductivity measurements in 2,6-dithienylanthracene and hexyl-substituted 2,6-dithienylanthracene films prepared by spin-coating of their α-diketone precursors followed by photoirradiation, revealing enough high potentials for semiconducting films with charge carrier mobilities of 0.8–0.9 cm2 V−1 s−1 in the photo-irradiated films.

Graphical abstract: FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

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Publication details

The article was received on 27 Jul 2012, accepted on 20 Sep 2012 and first published on 09 Oct 2012


Article type: Communication
DOI: 10.1039/C2CC35439J
Citation: Chem. Commun., 2012,48, 11136-11138
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    FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

    H. Yamada, C. Ohashi, T. Aotake, S. Katsuta, Y. Honsho, H. Kawano, T. Okujima, H. Uno, N. Ono, S. Seki and K. Nakayama, Chem. Commun., 2012, 48, 11136
    DOI: 10.1039/C2CC35439J

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