Issue 20, 2012
From the journal:

Chemical Communications

Naphthoylene(trifluoromethylbenzimidazole)-dicarboxylic acid imides for high-performance n-type organic field-effect transistors†

Ping Deng,a   Yan Yan,b   Sui-Dong Wang*b  and  Qing Zhang*a  

* Corresponding authors

a Department of Polymer Science and Engineering, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai, China
E-mail: qz14@sjtu.edu.cn
Tel: +86 10-34202726

b Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
E-mail: wangsd@suda.edu.cn
Tel: +86 512-65880940

Abstract

1,8-Naphthoylene(trifluoromethylbenzimidazole)-4,5-dicarboxylic acid imide (NTFBII) derivatives were synthesized. The OFET devices based on these new materials showed typical n-type OFET behavior and achieved an electron mobility as high as 0.10 cm2 V−1 s−1 with good bias stress stability.

Graphical abstract: Naphthoylene(trifluoromethylbenzimidazole)-dicarboxylic acid imides for high-performance n-type organic field-effect transistors

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Article information

DOI
https://doi.org/10.1039/C2CC17272K
Article type
Communication
Submitted
22 Nov 2011
Accepted
13 Jan 2012
First published
17 Jan 2012

Chem. Commun., 2012,48, 2591-2593

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Naphthoylene(trifluoromethylbenzimidazole)-dicarboxylic acid imides for high-performance n-type organic field-effect transistors

P. Deng, Y. Yan, S. Wang and Q. Zhang, Chem. Commun., 2012, 48, 2591 DOI: 10.1039/C2CC17272K

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