Neutral tetrathia[22]annulene[2.1.2.1] based field-effect transistors: improved on/off ratio defies ring puckering

Kamaljit Singh; Tarunpreet Singh Virk; Jing Zhang; Wei Xu; Daoben Zhu

doi:10.1039/C2CC37004B

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Chemical Communications

Issue 100, 2012

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Neutral tetrathia[22]annulene[2.1.2.1] based field-effect transistors: improved on/off ratio defies ring puckering

Kamaljit Singh,*^a Tarunpreet Singh Virk,^a Jing Zhang,^b Wei Xu^b and Daoben Zhu*^b

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Organic Synthesis Laboratory, Department of Applied Chemical Sciences and Technology, Guru Nanak Dev University, Amritsar 143005, India
E-mail: kamaljit19in@yahoo.co.in ;
Fax: +91 2258819/20

Beijing National Laboratory for Molecular Science, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P. R. China
E-mail: wxu@iccas.ac.cn

Chem. Commun., 2012,48, 12174-12176

DOI: 10.1039/C2CC37004B
Received 27 Sep 2012, Accepted 01 Nov 2012
First published online 01 Nov 2012

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New, neutral, slightly puckered aromatic meso-substituted tetrathia[22]annulene[2.1.2.1] macrocyclic architectures display p-type semiconductor behaviour and constitute molecular field-effect transistors with high on/off ratios (8.67 × 10⁶) and high mobility (0.23 cm² V⁻¹ s⁻¹) in thin films deposited on octadecyltrichlorosilane (OTS) modified SiO₂.

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Kamaljit Singh
Tarunpreet Singh Virk
Jing Zhang
Wei Xu
Daoben Zhu

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Neutral tetrathia[22]annulene[2.1.2.1] based field-effect transistors: improved on/off ratio defies ring puckering

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