Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee; Seung Chul Yew; Jinhan Cho; Youn Sang Kim

doi:10.1039/C2CC35959F

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Chemical Communications

Issue 98, 2012

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Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee,^a Seung Chul Yew,^b Jinhan Cho*^c and Youn Sang Kim*^a^d

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Corresponding authors

Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul, Republic of Korea
E-mail: younskim@snu.ac.kr

DRAM Process Architecture Team, Memory Division, Semiconductor Business, Samsung Electronics Co, Ltd, Banwol-Dong, Hwasung-si, Republic of Korea

Department of Chemical and Biological Engineering, Korea University, Seoul, Republic of Korea
E-mail: jinhan71@korea.ac.kr

Advanced Institutes of Convergence Technology, Iui-dong 864-1, Yeongtong-gu, Suwon-si, Republic of Korea

Chem. Commun., 2012,48, 12008-12010

DOI: 10.1039/C2CC35959F
Received 17 Aug 2012, Accepted 22 Oct 2012
First published online 05 Nov 2012

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We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window ( [similar] 11 V) and relatively good endurance properties (over 100 cycles).