FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

Hiroko Yamada; Chika Ohashi; Tatsuya Aotake; Shuhei Katsuta; Yoshihito Honsho; Hiroo Kawano; Tetsuo Okujima; Hidemitsu Uno; Noboru Ono; Shu Seki; Ken-ichi Nakayama

doi:10.1039/C2CC35439J

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Chemical Communications

Issue 90, 2012

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FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

Hiroko Yamada,*^a^b Chika Ohashi,^c Tatsuya Aotake,^a Shuhei Katsuta,^a Yoshihito Honsho,^d Hiroo Kawano,^e Tetsuo Okujima,^e Hidemitsu Uno,^e Noboru Ono,^e Shu Seki*^d and Ken-ichi Nakayama*^b^c

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Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Japan
E-mail: hyamada@ms.naist.jp ;
Fax: +81 743-724-6042

CREST, JST, 7 Goban-cho, Chiyoda-ku 102-0076, Japan

Department of Organic Device Engineering, Graduate School of Science and Engineering, Yamagata University, Yonezawa 992-8510, Japan
E-mail: nakayama@yz.yamagata-u.ac.jp ;
Fax: +81 238-26-3713

Department of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Japan
E-mail: seki@chem.eng.osaka-u.ac.jp ;
Fax: +81 6-6879-4586

Department of Chemistry and Biology, Graduate School of Science and Engineering, Ehime University, Matsuyama, Japan

Chem. Commun., 2012,48, 11136-11138

DOI: 10.1039/C2CC35439J
Received 27 Jul 2012, Accepted 20 Sep 2012
First published online 09 Oct 2012

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Hole mobility was evaluated by top-contact bottom gate field effect transistor and time resolved microwave conductivity measurements in 2,6-dithienylanthracene and hexyl-substituted 2,6-dithienylanthracene films prepared by spin-coating of their α-diketone precursors followed by photoirradiation, revealing enough high potentials for semiconducting films with charge carrier mobilities of 0.8–0.9 cm² V⁻¹ s⁻¹ in the photo-irradiated films.

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FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

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FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

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