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Controlling volatility in solid-state, redox-based memory devices using heterojunction barriers to ion transport

Corresponding authors
Department of Chemistry, University of Manitoba, Manitoba, Canada
Department of Electrical and Computer Engineering, University of Manitoba, Manitoba, Canada
Chem. Commun., 2012,48, 9409-9411

DOI: 10.1039/C2CC34557A
Received 25 Jun 2012, Accepted 30 Jul 2012
First published online 02 Aug 2012
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