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Controlling volatility in solid-state, redox-based memory devices using heterojunction barriers to ion transport

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Corresponding authors
a
Department of Chemistry, University of Manitoba, Manitoba, Canada
E-mail: michael.freund@ad.umanitoba.ca
b
Department of Electrical and Computer Engineering, University of Manitoba, Manitoba, Canada
E-mail: thomson@ee.umanitoba.ca
Chem. Commun., 2012,48, 9409-9411

DOI: 10.1039/C2CC34557A
Received 25 Jun 2012, Accepted 30 Jul 2012
First published online 02 Aug 2012
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