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Department of Chemical Engineering, National Taiwan University of Science and Technology, Section 4, #43, Keelung Road, Taipei 106, ROC
; Fax: +88 6-2-27376644
; Tel: +88 6-2-27303636
Chem. Commun., 2012,48, 4848-4850
18 Feb 2012,
26 Mar 2012
First published online
27 Mar 2012
A Cu2S–CuInS2–ZnSe quantum dot (QD)-sensitized solar cell with cascaded energy gap structures has been fabricated. Under simulated illumination (AM 1.5, 100 mW cm−2), the best device is obtained with a Cu2S–CuInS2–ZnSe QD-sensitized solar cell, yielding a power conversion efficiency of 2.52%.
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