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Issue 6, 2011
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Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

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Abstract

Charge decay and lateral spreading properties were characterized by modified electrostatic force microscopy (EFM) under a high vacuum at elevated temperatures. Variations in the charge profiles were modeled with the maximum charge density (ρm) and the lateral spreading distance (Δs), as extracted from the EFM potential line profiles. The scaling limitation of nitride trap memory is discussed based on the projected lateral spreading distances for holes and electrons, which were determined to be approximately 18 nm and 12 nm, respectively, at room temperature.

Graphical abstract: Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

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Publication details

The article was received on 30 Jan 2011, accepted on 20 Mar 2011 and first published on 09 May 2011


Article type: Paper
DOI: 10.1039/C1NR10104H
Citation: Nanoscale, 2011,3, 2560-2565
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    Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

    S. J. Baik, K. S. Lim, W. Choi, H. Yoo, J. Lee and H. Shin, Nanoscale, 2011, 3, 2560
    DOI: 10.1039/C1NR10104H

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