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Issue 7, 2011
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Focused laser spike (FLaSk) annealing of photoactivated chemically amplified resists for rapid hierarchical patterning

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Abstract

Lithographic alternatives to conventional layer-by-layer processes for the design of 3D structures such as photonic or phononic crystals often present a dichotomy: patterning control versuspatterning area. We demonstrate a combined technique of large area interference lithography and local area direct write focused laser spike (FLaSk) annealing that can enable the microscale patterning of hierarchical structures defined in their morphology by the interference and defined in placement and shape by the direct write. This is accomplished by doping a commercial chemically amplified photoresist (SU-8) with an absorbing dye to provide thermal activation at a wavelength shifted from that causing UV crosslinking. In this way, the necessary post-exposure bake to complete the crosslinking of the resist is locally performed by the FLaSk laser, rather than globally on a hot plate. By utilizing the same experimental setup as used by a 3D direct write system, it is possible to integrate another level of patterning by enabling fully dense, arbitrarily written features on multiple length scales. Both experimental and simulated results of this novel processing method are shown.

Graphical abstract: Focused laser spike (FLaSk) annealing of photoactivated chemically amplified resists for rapid hierarchical patterning

  • This article is part of the themed collection: Lithography
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Publication details

The article was received on 15 Jan 2011, accepted on 20 Mar 2011 and first published on 18 Apr 2011


Article type: Paper
DOI: 10.1039/C1NR10050E
Citation: Nanoscale, 2011,3, 2730-2738
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    Focused laser spike (FLaSk) annealing of photoactivated chemically amplified resists for rapid hierarchical patterning

    J. P. Singer, S. E. Kooi and E. L. Thomas, Nanoscale, 2011, 3, 2730
    DOI: 10.1039/C1NR10050E

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